Study on Physical Properties of Metal Oxides for Resistive Switching Devices in Advanced Electrical Memory and Neural Computing Applications

In this project students will acquire basic knowledge and hands on experience in designing and fabricating resistive switching devices known as “memristors” and obtaining their electrical properties. The students will fabricate the devices using various combinations of metal oxides and electrode materials using atomic layer deposition and sputtering systems in our laboratory. The students will also use an electrical probe station equipped with an optical microscope and a semiconductor parameter analyzer to characterize electrical properties of fabricated devices. The students will conduct the study with the view toward applications in advanced electrical memories and neural computing applications.

Location: NASA Ames

Mentor: Nobuhiko Kobayashi, Faculty, Associate Professor

Secondary mentor: Junce Zhang (UCSC Ph.D. candidate)